2007. 10. 31 1/3 semiconductor technical data KDS123E silicon epitaxial planar diode revision no : 0 ultra high speed switching application. features low forward voltage fast reverse recovery time small total capacitance ultra- small surface mount package maximum rating (ta=25 ) dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. cathode 2 2. anode 1 3. anode 2 / cathode 1 3 2 d1 d2 1 + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 80 v reverse voltage v r 80 v maximum (peak) forward current i fm 300* ma average forward current i o 100* ma surge current (10ms) i fsm 2* a power dissipation p d 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =100ma - - 1.2 v reverse current i r v r =80v - - 0.1 a total capacitance c t v r =6v, f=1mhz - - 3.5 pf type name marking u s * unit rating. total rating=unit rating 0.7
forward current i f (ma) forward voltage v f (v) i f - v f i r - v r reverse voltage v r (v) reverse current i r (na) reverse voltage v r (v) c t - v r total capacitance c t (pf) f=1mhz 0 0.1 0.4 0.6 0.2 0.8 1.0 1.2 0.001 0.01 1 10 100 0.1 1 10 ta=25 c ta=25 c 0 0.1 20 30 10 40 50 60 70 80 01015 5 202530 40 35 45 0.001 0.01 1 ta=25 c forward current i f (ma) forward voltage v f (v) i f - v f i r - v r reverse voltage v r (v) reverse current i r (na) reverse voltage v r (v) c t - v r total capacitance c t (pf) f=1mhz 0 0.1 0.4 0.6 0.2 0.8 1.0 1.2 0.001 0.01 1 10 100 0.1 1 10 ta=25 c ta=25 c 0 0.1 20 30 10 40 50 60 70 80 01015 5 202530 40 35 45 0.001 0.01 1 ta=25 c d1, d3 d2, d4 d1, d3 d2, d4 d1, d3 d2, d4 2007. 10. 31 2/3 revision no : 0 KDS123E
2007. 10. 31 3/3 KDS123E revision no : 0 0 power dissipation p (mw) -40 p - ta 25 50 75 100 125 150 40 20 60 80 100 120 ambient temperature ta ( c)
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